Abstract:
Objective: The objective of this program is to demonstrate InGaAs/GaAs quantum dot laser grown on dislocation filters on silicon substrates that will be used as a pump source for cladding-pumped Si Raman amplifiers integrated on the same chip.
Intellectual merit: The intellectual merit is the first demonstration of high-performance hybrid III-V on Si lasers and their integration with Si Raman amplifiers.
Broader impacts: The broader impacts are the interdisciplinary nature of the program, its undergraduate and underrepresented minorities and K-12 outreach. The proposed program provides a broader impact to science and society beyond technical merits. It combines optoelectronics with microelectronics, physics, and materials science and engineering, thereby extends optoelectronics to real applications. The proposed program outlines interdisciplinary research for graduate and undergraduate students. Outreach projects for women and underrepresented minorities are highlighted. The program proposes to expose middle- and high-school students to scientific and engineering disciplines.
For more information visit the National Science Foundation (NSF) Web site.